Optimization of Epitaxial Graphene Growth for Quantum Metrology

 

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Davood Momeni Pakdehi

Optimization of Epitaxial Graphene Growth for Quantum Metrology

ISBN: 978-3-95606-554-5   |   Erscheinungsjahr: 2020    |    Auflage: 1
Seitenzahl: 228   |    Einband: Broschur    |    Gewicht: 689 g
Lieferzeit: 2-3 Tage
24,00 €
Inkl. 7% MwSt., zzgl. Versandkosten bei Auslandsbestellungen

The electrical quantum standards have played a decisive role in modern metrology, particularly since the introduction of the revised International System of Units (SI) in May 2019. By adapting the basic units to exactly defined natural constants, the quantized Hall resistance (QHR) standards are also given precisely. The Von Klitzing constant RK = h/e 2 (h Planck's constant and e elementary charge) can be measured precisely using the quantum Hall effect (QHE) and is thus the primary representation of the ohm. Currently, the QHR standard based on GaAs/AlGaAs heterostructure has succeeded in yielding robust resistance measurements with high accuracy <10−9 . In recent years, graphene has been vastly investigated due to its potential in QHR metrology. This single-layer hexagonal carbon crystal forms a two-dimensional electron gas system and exhibits the QHE, due to its properties, even at higher temperatures. Thereby, in the future the QHR standards could be realized in more simplified experimental conditions that can be used at higher temperatures and currents as well as smaller magnetic fields than is feasible in conventional GaAs/AlGaAs QHR. The quality of the graphene is of significant importance to the QHR standards application. The epitaxial graphene growth on silicon carbide (SiC) offers decisive advantages among the known fabrication methods. It enables the production of largearea graphene layers that are already electron-doped and do not have to be transferred to another substrate. However, there are fundamental challenges in epitaxial graphene growth. During the high-temperature growth process, the steps on the SiC surface bunch together and form terraces with high steps. This so-called step-bunching gives rise to the graphene thickness inhomogeneity (e.g., the bilayer formation) and extrinsic resistance anisotropy, which both deteriorate the performance of electronic devices made from it. In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer-assisted sublimation growth method are minutely investigated. Atomic force microscopy (AFM) is used to show that the previously neglected flow-rate of the argon process gas has a significant influence on the morphology of the SiC substrate and atop carbon layers. The results can be well explained using a simple model for the thermodynamic conditions at the layer adjacent to the surface. The resulting control option of step-bunching on the sub-nanometer scales is used to produce the ultra-flat, monolayer graphene layers without the bilayer inclusions that exhibit the vanishing of the resistance anisotropy. The comparison of four-point and scanning tunneling potentiometry measurements shows that the remaining small anisotropy represents the ultimate limit, which is given solely by the remaining resistances at the SiC terrace steps. Thanks to the advanced growth control, also large-area homogenous quasi-freestanding monolayer and bilayer graphene sheets are fabricated. The Raman spectroscopy and scanning tunneling microscopy reveal very low defect densities of the layers. In addition, the excellent quality of the produced freestanding layers is further evidenced by the four-point measurement showing low extrinsic resistance anisotropy in both micro- and millimeter-scales. ABSTRACT ii The precise control of step-bunching using the Ar flow also enables the preparation of periodic non-identical SiC surfaces under the graphene layer. Based on the work function measurements by Kelvin-Probe force microscopy and X-ray photoemission electron microscopy, it is shown for the first time that there is a doping variation in graphene, induced by a proximity effect of the different near-surface SiC stacks. The comparison of the AFM and low-energy electron microscopy measurements have enabled the exact assignment of the SiC stacks, and the examinations have led to an improved understanding of the surface restructuring in the framework of a step-flow model. The knowledge gained can be further utilized to improve the performance of epitaxial graphene quantum resistance standard, and overall, the graphene-based electronic devices. Finally, the QHR measurements have been shown on the optimized graphene monolayers. In order to operate the graphene-based QHR at desirably low magnetic field ranges (B < 5 T), two known charge tuning techniques are applied, and the results are discussed with a view to their further implementation in the QHR metrology.

PTB E-117