Epitaxial graphene on SiC for quantum resestance metrology

 

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M. Kruskopf

Epitaxial graphene on SiC for quantum resestance metrology

ISBN: 978-3-95606-325-1   |   Erscheinungsjahr: 2017    |    Auflage: 1
Seitenzahl: 122   |    Einband: Broschur    |    Gewicht: 454 g
Lieferzeit: 2-3 Tage
18,00 €
Inkl. 7% MwSt., zzgl. Versandkosten bei Auslandsbestellungen

In this thesis, processes for the fabrication of a new generation of graphene-based resistance standards were developed. To overcome the challenges of standard epitaxial growth techniques e.g. the formation of high step edges in the silicon carbide substrate and the formation of bilayer graphene the new methods apply different ways to control the amount of available carbon during the growth stages.

PTB E - 111